Semiconductor memory device and memory system configured to perform tracking read on first memory cells followed by shift read on second memory cells using read voltage correction value determined during the tracking read

ABSTRACT

A semiconductor memory device includes first, second, and third memory cells, and first, second, and third word lines that are respectively connected to gates of the first, second, and third memory cells. A control circuit executes first, second, and third read operations in response to first, second, and third command sets, respectively. The first read operation includes a first read sequence, in which the control circuit reads data by applying first to third voltages to the first word line. In the second read operation, the control circuit reads data by applying a second read voltage that is set based on a result of the first read sequence, to the second word line. In the third read operation, the control circuit reads data from the third memory cells by applying a second read voltage that is set independently of the result of the first read sequence, to the third word line.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/442,683, filed on Feb. 26, 2017, now U.S. Pat. No. 9,859,011, whichis based upon and claims the benefit of priority from Japanese PatentApplication No. 2016-161058, filed Aug. 19, 2016, the entire contents ofeach of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor memorydevice and a memory system.

BACKGROUND

A NAND type flash memory is known as one type of a semiconductor memorydevice.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a memory system according to a firstembodiment.

FIG. 2 is a block diagram of a semiconductor memory device according tothe first embodiment.

FIG. 3 is a circuit diagram of a memory cell array including thesemiconductor memory device according to the first embodiment.

FIG. 4 is a threshold voltage distribution of a memory cell includingthe semiconductor memory device according to the first embodiment.

FIG. 5 is a circuit diagram of a sense amplifier module including thesemiconductor memory device according to the first embodiment.

FIG. 6 is an explanatory diagram of a tracking read operation of thesemiconductor memory device according to the first embodiment.

FIG. 7 is an explanatory diagram of a shift read operation of thesemiconductor memory device according to the first embodiment.

FIG. 8 is a flowchart of the read operation of the memory systemaccording to the first embodiment.

FIG. 9 is a waveform diagram of the read operation of the memory systemaccording to the first embodiment.

FIG. 10 is a command sequence of the tracking read operation of thememory system according to the first embodiment.

FIG. 11 is a command sequence of the shift read operation of the memorysystem according to the first embodiment.

FIG. 12 is a command sequence of a normal read operation of the memorysystem according to the first embodiment.

FIG. 13 is a flowchart of a read operation of a memory system accordingto a second embodiment.

FIG. 14 is a waveform diagram of the read operation of the memory systemaccording to the second embodiment.

FIG. 15 is a flowchart of a read operation of a memory system accordingto a third embodiment.

FIG. 16 is a waveform diagram of the read operation of the memory systemaccording to the third embodiment.

FIG. 17 is a flowchart of a read operation of a memory system accordingto a fourth embodiment.

FIG. 18 is a waveform diagram of the read operation of the memory systemaccording to the fourth embodiment.

FIG. 19 is a flowchart of a write operation of a memory system in afifth embodiment.

FIG. 20 is a flowchart of the read operation of the memory systemaccording to the fifth embodiment.

FIG. 21 is a waveform diagram of the read operation of the memory systemaccording to the fifth embodiment.

FIG. 22 is a flowchart of a write operation of the memory systemaccording to a sixth embodiment.

FIG. 23 is a flowchart of the write operation of the memory systemaccording to the sixth embodiment.

FIG. 24 is a command sequence of the write operation of the memorysystem according to the sixth embodiment.

FIG. 25 is a waveform diagram of a read operation of a memory systemaccording to a first modification example.

FIG. 26 is a waveform diagram of a read operation of the memory systemaccording to a second modification example.

FIG. 27 is a flowchart of a read operation of the memory systemaccording to a third modification example.

FIG. 28 is a waveform diagram of the read operation of the memory systemaccording to the third modification example.

FIG. 29 is a command sequence of the read operation of the memory systemthat is applied in the third modification example.

FIG. 30 is a command sequence for setting a correction value for a readvoltage used in the read operation of the memory system according to thethird modification example.

FIG. 31 is a different command sequence of the read operation of thememory system that may be applied in the third modification example.

DETAILED DESCRIPTION

Embodiments provide a semiconductor memory device and a memory system,which can speed up operations on the semiconductor memory device.

In general, according to an embodiment, a semiconductor memory deviceincludes first, second, and third memory cells, and first, second, andthird word lines that are respectively connected to gates of the first,second, and third memory cells. A control circuit executes first,second, and third read operations in response to first, second, andthird command sets, respectively. The first read operation includes afirst read sequence, in which the control circuit reads data by applyingfirst to third voltages to the first word line. In the second readoperation, the control circuit reads data by applying a second readvoltage that is set based on a result of the first read sequence, to thesecond word line. In the third read operation, the control circuit readsdata from the third memory cells by applying a second read voltage thatis set independently of the result of the first read sequence, to thethird word line.

In the following, embodiments will be described with reference to thedrawings. The diagrams to be referred are schematic. In the followingdescription, elements having the same function and configuration aredenoted by the same reference symbol. The alphabet or number followingthe reference symbol is used in distinguishing among elements having thesame configuration. If there is no need to distinguish the elementsdenoted by the same reference symbol, these elements are referred toonly by reference symbol.

1. First Embodiment

In the following, a semiconductor memory device and a memory systemaccording to a first embodiment will be described.

1-1. Configuration

1-1-1. Configuration of Memory System 1

First, the configuration of a memory system will be described withreference to FIG. 1. FIG. 1 illustrates a block diagram of a memorysystem. As illustrated in FIG. 1, a memory system 1 includes asemiconductor memory device 10, and a controller 20.

The semiconductor memory device 10 is a NAND-type flash memory data thatstores data in a nonvolatile manner. The configuration of thesemiconductor memory device 10 will be described later in detail.

The controller 20 instructs the semiconductor memory device 10 to read,write, and erase data, in response to an instruction from an externalhost device (not illustrated). Further, the controller 20 manages thememory space of the semiconductor memory device 10.

As illustrated in FIG. 1, the controller 20 includes a processor (CPU)21, a built-in memory (RAM) 22, an ECC circuit 23, a NAND interfacecircuit 24, a buffer memory 25, and a host interface circuit 26.

The processor 21 controls the operation of the entire controller 20. Forexample, the processor 21 issues a write instruction based on the NANDinterface, in response to a write command received from the host device.This operation is also applied to reading and erasing.

The built-in memory 22 is, for example, a semiconductor memory such as aDRAM, and used as a work area for the processor 21. The built-in memory22 retains firmware for managing the semiconductor memory device 10,various types of management tables, or the like.

The ECC circuit 23 performs an error checking and correcting (ECC)process of data. Specifically, the ECC circuit 23 generates a paritybased on the write data at the time of writing data. The ECC circuit 23generates a syndrome from the parity at the time of reading data,detects an error, and corrects the detected error.

The NAND interface circuit 24 is connected to the semiconductor memorydevice 10 and communicates with the semiconductor memory device 10. Forexample, the NAND interface circuit 24 transmits and receives aninput/output signal I/O to and from the semiconductor memory device 10.For example, the input/output signal I/O that the controller 20transmits to the semiconductor memory device 10 includes a command CMD,address information ADD, and write data DAT, and the input/output signalI/O that the controller 20 receives from the semiconductor memory device10 includes status information STS, and read data DAT.

The buffer memory 25 temporarily retains data or the like that thecontroller 20 receives from the semiconductor memory device 10 and thehost device.

The host interface circuit 26 is connected to a host device through ahost bus (not illustrated) and communicates with the host device. Forexample, the host interface circuit 26 transfers the instruction anddata received from the host device to the processor 21 and the buffermemory 25, respectively.

1-1-2. Configuration of Semiconductor Memory Device 10

Next, the configuration of the semiconductor memory device 10 will bedescribed with reference to FIG. 2. FIG. 2 illustrates a block diagramof the semiconductor memory device 10. As illustrated in FIG. 2, thesemiconductor memory device 10 includes a memory cell array 11, a senseamplifier module 12, a row decoder 13, an input/output circuit 14, aregister 15, a logic controller 16, a sequencer 17, a ready/busy controlcircuit 18, and a voltage generator 19.

The memory cell array 11 includes blocks BLK0 to BLKn (n is a naturalnumber equal to or greater than 1). The block BLK is a set of aplurality of nonvolatile memory cells associated with a bit line and aword line, and is, for example, an erase unit for data. Each memory cellcan store data of a plurality of bits, by applying a multi-level cell(MLC) method.

The sense amplifier module 12 outputs the data DAT read from the memorycell array 11 to the controller 20 through the input/output circuit 14.The sense amplifier module 12 transfers the write data DAT received fromthe controller 20 through the input/output circuit 14 to the memory cellarray 11.

The sense amplifier module 12 also includes a counter CT, and aplurality of sense amplifier unit (not illustrated) provided for eachbit line. The counter CT counts the number of on-cells of the read dataand transfers the count result to the sequencer 17. Details of the senseamplifier unit will be described later.

The row decoder 13 selects the word line corresponding to the memorycell to be subjected to the read operation and the write operation.Then, the row decoder 13 applies desired voltages to the selected wordline and the unselected word line, respectively.

The input/output circuit 14 transmits and receives input and outputsignals I/O (I/O1 to I/O8) having, for example, an 8 bit width to andfrom the controller 20. For example, the input/output circuit 14transfers the write data DAT included in the input/output signal I/Oreceived from the controller 20, to the sense amplifier module 12.Further, the input/output circuit 14 transmits the read data DATtransferred from the sense amplifier module 12, to the controller 20 asan input/output signal I/O.

The register 15 includes a status register 15A, an address register 15B,and a command register 15C. The status register 15A retains statusinformation STS. The status register 15A transfers the statusinformation STS to the input/output circuit 14, in response to theinstruction from the sequencer 17. The address register 15B receivesaddress information ADD from the input/output circuit 14 and retains theaddress information ADD. The address register 15B transfers a columnaddress signal CA and a row address signal RA, included in the addressinformation ADD, to the sense amplifier module 12 and the row decoder13, respectively. The command register 15C receives a command CMD fromthe input/output circuit 14, and retains the command CMD. The commandregister 15C transfers the command CMD to the sequencer 17.

The logic controller 16 receives various control signals from thecontroller 20, and controls the input/output circuit 14 and thesequencer 17. As the control signal, for example, a chip enable signal/CE, a command latch enable signal CLE, an address latch enable signalALE, a write enable signal /WE, a read enable signal /RE, and a writeprotect signal /WP are used. The signal /CE is used to enable thesemiconductor memory device 10. The signal CLE is used to notify theinput/output circuit 14 that the signal input to the semiconductormemory device 10 in parallel with the asserted signal CLE is the commandCMD. The signal ALE is used to notify the input/output circuit 14 thatthe signal input to the semiconductor memory device 10 in parallel withthe asserted signal ALE is the address information ADD. The signals /WEand /RE are used to instruct the input/output circuit 14 to input andoutput, for example, input/output signals I/O1 to I/O8, respectively.The signal /WP is used to protect the semiconductor memory device 10,for example, when the power supply is turned on and off.

The sequencer 17 controls the operation of the entire semiconductormemory device 10. Specifically, the sequencer 17 controls the senseamplifier module 12, the row decoder 13, the voltage generator 19 andthe like based on the command CMD transferred from the command register15C, and executes a write operation, a read operation, and the like ofdata. Furthermore, the sequencer 17 can calculate a correction value ofthe optimum read voltage, based on the results of a plurality of readoperations using different read voltages. The details of the operationwill be described later.

Further, the sequencer 17 includes a register REG. The register REGretains, for example, a parameter associated with the voltage applied tothe word line during a read operation, and the sequencer 17 executes theread operation with reference to this parameter. Each parameter retainedin the register REG can be rewritten.

The ready/busy control circuit 18 generates a RY/(BY) based on theoperation state of the sequencer 17, and transmits this signal to thecontroller 20. The signal RY/(BY) is a signal for notifying thecontroller 20 whether the semiconductor memory device 10 is in a readystate or a busy state. In the ready state, an instruction from thecontroller 20 is accepted, and in the busy state, an instruction fromthe controller 20 is not accepted. The signal RY/(/BY) is generated bythe ready/busy control circuit 18 controlling on/off of the transistorTr connected to the output thereof. For example, the signal RY/(/BY),the semiconductor memory device 10 is set to “L” level (busy state)during the operation such as reading of data by the semiconductor memorydevice 10, and is set to “H” level when these operations are completed(ready state).

The voltage generator 19 generates a desired voltage based on theinstruction from the sequencer 17. The voltage generator 19 supplies thegenerated voltage to the memory cell array 11, the sense amplifiermodule 12, and the row decoder 13.

1-1-3. Configuration of Memory Cell Array 11

Next, the configuration of the memory cell array 11 will be describedwith reference to FIG. 3. FIG. 3 is a circuit diagram of the memory cellarray 11, and illustrates a detailed circuit configuration of one blockBLK in the memory cell array 11. As illustrated in FIG. 3, the block BLKincludes a plurality of NAND strings NS.

Each NAND string NS corresponds to one of bit lines BL0 to BL(L−1)((L−1) is a natural number equal to or larger than 1), and includes, forexample, eight memory cell transistors MT (MT0 to MT7) and selecttransistors ST1 and ST2. Any other number of memory cell transistors MTmay be included in one NAND string NS.

The memory cell transistor MT includes a control gate and a chargestorage layer, and retains data in a nonvolatile state. In addition, thememory cell transistors MT0 to MT7 are connected in series between thesource of the select transistor ST1 and the drain of the selecttransistor ST2. The gates of the select transistor ST1 and ST2 in thesame block BLK are commonly connected to select gate lines SGD and SGS,respectively. Similarly, the control gates of the memory celltransistors MT0 to MT7 in the same block BLK are commonly connected toword lines WL0 to WL7, respectively.

In the memory cell array 11, the drain of the select transistor ST1 inany NAND string NS in the same column is commonly connected to the bitline BL. That is, the bit line BL commonly connects the NAND strings NSin the same column in a plurality of blocks BLK. Further, the sources ofthe plurality of select transistors ST 2 are commonly connected to asource line SL.

In the above configuration, a set of one-bit data pieces stored in aplurality of memory cells connected to a common word line WL is called“page”. Therefore, when two-bit data is stored in one memory cell, dataof two pages is stored in a set of the plurality of memory cellsconnected to one word line WL.

“Page” includes data area and a redundant area. An external electronicequipment sends data to be stored in the data area of the semiconductormemory device 10. In the redundant area, for example, data such asmetadata concerning the data area is written.

Incidentally, the threshold voltage distribution of the memory celltransistor MT described above is, for example, as illustrated in FIG. 4.FIG. 4 illustrates the threshold voltage distribution of the memory celltransistor MT retaining two-bit data and the voltage used during theread operation. The vertical axis and the horizontal axis in FIG. 4correspond to the number of memory cell transistors MT and the thresholdvoltage Vth, respectively.

When the memory cell transistor MT retains two-bit data, the thresholdvoltage distribution thereof is divided into four distributions asillustrated in FIG. 4. The two-bit data correlated with each of thesefour threshold voltage distributions is called “ER” level, “A” level,“B” level, and “C” level in an ascending order of the threshold voltage.The memory cell transistor MT retaining “ER” level corresponds to a dataerase state, and the memory cell transistor retaining “A” level, “B”level, or “C” level corresponds to a data write state. During a readoperation, a level of the threshold voltage of the memory celltransistor MT to be read is determined. For this determination, variousread voltages are set.

A read voltage AR for determining whether a certain memory celltransistor MT has a threshold voltage of “ER” level or a thresholdvoltage equal to or higher than “A” level is set to a range between thehigher side of “ER” level and the lower side of “A” level. A readvoltage BR for determining whether a certain memory cell transistor MThas a threshold voltage equal to or lower than “A” level or a thresholdvoltage equal to or higher than “B” level is set to a range between thehigher side of “A” level and the lower side of “B” level. A read voltageCR for determining whether a certain memory cell transistor MT has athreshold voltage equal to or lower than “B” level or a thresholdvoltage of “C” level is set to a range between the higher side of “B”level and the lower side of “C” level. The read voltage Vreadillustrated in FIG. 4 is applied to the gate of the memory celltransistor MT and set to a voltage at which the memory cell transistorMT is turned on, regardless of the data that is retained in the memorycell transistor MT. The relationship is established AR<BR<CR<Vread amongthese voltage values.

1-1-4. Configuration of Sense Amplifier Module 12

Next, the configuration of the sense amplifier module 12 will bedescribed with reference to FIG. 5. FIG. 5 is a circuit diagram of thesense amplifier module 12. As illustrated in FIG. 5, the sense amplifiermodule 12 includes sense amplifier units SAUs (SAU0 to SAU(L−1))provided for respective bit lines BL.

Each sense amplifier unit SAU is connected to the counter CT so as to beable to transmit and receive data. Each sense amplifier unit SAUincludes a sense amplifier SA, and latch circuits SDL, LDL, UDL, andXDL. The sense amplifier SA, and the latch circuits SDL, LDL, UDL, andXDL are connected so as to be able to transmit and receive data to andfrom each other.

During a read operation, the sense amplifier SA senses the data read atthe corresponding bit line BL and determines whether the read data is“0” or “1”. Specifically, for example, the sense amplifier unit SAUfixes the read data at a timing when the control signal STB generated bythe sequencer 17 is asserted. During a write operation, a voltage isapplied to the bit line BL based on the write data.

The latch circuits SDL, LDL, and UDL temporarily retain read data andwrite data. The read data fixed by the sense amplifier SA during theread operation, and the write data transferred to the latch circuit XDLduring writing are transferred to, for example, any one of the latchcircuits SDL, LDL, and UDL.

The latch circuit XDL is used for inputting/outputting data between thesense amplifier unit SAU and the controller 20. That is, the datareceived from the controller 20 is transferred to the latch circuit SDL,LDL, or UDL or the sense amplifier SA through the latch circuit XDL. Thedata of the latch circuit SDL, LDL, or UDL or the sense amplifier SA istransferred to the controller 20 through the latch circuit XDL.

Incidentally, any other configurations of the sense amplifier module 12are possible, and various modifications can be made. For example, thenumber of latch circuits included in the sense amplifier unit SAU isdesigned, based on the number of bits of data retained in one memorycell transistor MT.

1-2. Operation

In the following, the operation of the memory system 1 will bedescribed.

1-2-1. Operation of Semiconductor Memory Device 10

First, prior to explaining the operation of the entire memory system 1,a plurality of operations that can be executed by the semiconductormemory device 10 will be described below.

The semiconductor memory device 10 can execute a normal read, a trackingread, and a shift read. In the read operation of memory system 1, datais read out by selecting one or more of these operations.

The normal read is a normal read sequence for reading data by using apreset read voltage. The tracking read is a read sequence fordetermining an optimum read voltage. The shift read is a read sequenceusing a correction value associated with the optimum read voltage.

In the following, the details of the tracking read and the shift readwill be described below with reference to FIG. 6 and FIG. 7. FIG. 6 andFIG. 7 illustrate threshold voltage distributions of two adjacentlevels, and respectively illustrate examples of the read voltages usedfor tracking read and shift read.

The memory cell transistor MT is influenced by program disturbance andfactors affecting data retention after the write operation, readdisturbance after the read operation, and the like. The thresholdvoltage distribution of the memory cell is increased by the influence ofprogram disturbance and read disturbance due to various voltages appliedto the memory cell, and is lowered by the factors affecting dataretention such that electric charge is drained from the memory cell.When receiving such influence, the threshold voltage distribution of thememory cell transistor MT may spread as indicated, for example, by abroken line in FIG. 6. In the normal read, data may not be correctlyread out from the memory cell transistor MT that has the thresholdvoltage distribution spread in this way.

In the tracking read, in order to calculate the correction value of theread voltage, for example, read operations using five types of readvoltages (Vtr1 to Vtr5) as illustrated in FIG. 6 are executed. Thevoltage values of the voltages Vtr1 to Vtr5 are different from eachother and the range of the voltage values is set to include the valleyof the adjacent threshold voltage distribution. The sequencer 17calculates the correction value of the read voltage based on the readresults of the voltages Vtr1 to Vtr5.

Specifically, the counter CT counts the number of on-cells and transfersthis count information to the sequencer 17, at each read operation inthe tracking read. The sequencer 17 calculates the amount of change ineach number of on-cells. For example, the sequencer 17 calculates adifference between the number of on-cells in the case of reading withthe voltage Vtr1 and the number of on-cells in the case of reading withthe voltage Vtr2. Similarly, a difference between the number of on-cellsin the case of reading with the voltages Vtr2 and Vtr3, a differencebetween the number of on-cells in the case of reading with the voltagesVtr3 and Vtr4, and a difference between the number of on-cells in thecase of reading with the voltages Vtr4 and Vtr5 are calculated. Thesequencer 17 calculates the correction value of the read voltage basedon the read results.

More specifically, a predetermined reference value is provided for theamount of change in the number of on-cells, and the sequencer 17determines as “fail” when the amount of change in the number of on-cellsexceeds the reference value, and determines as “pass” when the changeamount is equal to or less than the reference value. In this way, it ispossible to know what shape the threshold voltage distribution of thememory cell roughly has, by determining the amount of change in thenumber of on-cells with a certain threshold voltage value.

For example, when the amount of change in the number of on-cells is“pass” in a range between the voltages Vtr1 and Vtr2, and a rangebetween the voltages Vtr2 and Vtr3, and is “fail” in a range between thevoltages Vtr3 and Vtr4, and a range between the voltages Vtr4 and Vtr5,the valley of the threshold voltage distribution of the page is locatedin a range between the voltages Vtr1 and Vtr3 in which the amount ofchange in the number of on-cells is small. For example, the voltage Vtr2is selected as an optimum read voltage in this case. The correctionvalue corresponding to the calculated optimum read voltage is retainedin the register REG for each read level.

The correction value of the read voltage which is calculated in thismanner is applied to, for example, the shift read for the correspondingpage. Specifically, for example, when the bottom of the higher side ofthe threshold voltage distribution spreads as indicated by the dashedline in FIG. 7, the optimum read voltage Vcal corrected from the initialset read voltage Vdef to the lower read voltage is used for the readvoltage of the shift read. This voltage Vcal is included in the readvoltage used for tracking read. That is, in the case of this embodiment,the voltage Vcal is any one of the voltages Vtr1 to Vtr5.

As described above, the semiconductor memory device 10 according to thepresent embodiment can calculate the correction value of the readvoltage without passing through the controller 20 and execute a shiftread using the correction value, when executing the tracking read.

Any other number of tracking reads of the semiconductor memory device 10may be executed. For example, the semiconductor memory device 10 mayperform tracking read using six or more types of read voltages.

1-2-2. Read Operation of Memory System 1

the read operation of the memory system 1 will now be described. In theread operation of the memory system 1, the semiconductor memory device10 can execute the first to third read operations in response to thefirst to third command sets issued by the controller 20, respectively.

The first read operation includes the tracking read and the shift read.Specifically, the semiconductor memory device 10 first executes thetracking read and then executes the shift read of the same page by usingthe correction value of the read voltage obtained by the tracking read.The second read operation is a shift read using the correction value ofthe read voltage obtained by the most recent tracking read. The thirdread operation is a normal read.

In the following, the specific example of the read operation of thememory system 1 will be described with reference to FIG. 8 and FIG. 9.FIG. 8 and FIG. 9 respectively illustrate the example of the readoperation as a flowchart and a timing chart. The WLsel illustrated inFIG. 9 indicates a voltage applied to a word line WL correlated with apage from which data is to be read (hereinafter, referred to as aselected word line). In other words, the word line correlated with aselected word line WLsel illustrated in FIG. 9 changes appropriately asthe operation progresses.

As illustrated in FIG. 8, first, the controller 20 issues a firstcommand set CS1 (step S10), and sends the first command set CS1 to thesemiconductor memory device 10. The first command set CS1 is a commandsequence as illustrated in FIG. 10.

Specifically, first, the controller 20 issues a special command “xxh”and a read command “00h” continuously, and sends the commands “xxh” and“00h” to the semiconductor memory device 10. The command “xxh” is acommand to instruct the semiconductor memory device 10 to performtracking read and shift read. The command “00h” corresponds to anaddress input reception command for reading, and is a command toinstruct the semiconductor memory device 10 to perform a read operationof data.

Next, the controller 20 issues address information ADD, for example, forfive cycles, and sends the address information ADD to the semiconductormemory device 10. This address information ADD is used to designate theaddress to be read. Subsequently, the controller 20 issues the command“30h” and sends the command “30h” to the semiconductor memory device 10.Command “30h” is a command for causing the semiconductor memory device10 to read data, based on the command CMD and the address informationADD which are sent immediately before.

If the semiconductor memory device 10 receives such a command set CS1(command CMD and address information ADD), the input/output circuit 14of the semiconductor memory device 10 transfers the received command andaddress information, and write data to the command register 15C and theaddress register 15B, respectively. If the command “30h” is stored inthe command register 15C, the ready/busy signal is changed from “H”level to “L” level, and the sequencer 17 first executes the trackingread for the designated page (step S11).

Specifically, for example, as illustrated in FIG. 9, the row decoder 13sequentially applies the read voltages Vtr1 to Vtr5 to the selected wordline WLsel. When the sequencer 17 asserts a signal STB while each readvoltage is applied to the selected word line WLsel, data is read by thesense amplifier module 12, respectively. As described above, the numberof on-cells of the read data is counted by the counter CT, and thesequencer 17 calculates the correction value of the read voltage basedon this information on the number of on-cells.

Next, the sequencer 17 retains the correction value of the read voltagecalculated by the tracking read, in the register REG in the sequencer 17(step S12). Subsequently, the sequencer 17 executes shift read on thepage on which the tracking read is executed in step S11, by using thecorrection value retained in the register REG (step S13).

Specifically, for example, as illustrated in FIG. 9, the row decoder 13applies the read voltage Vcal1 to the selected word line WLsel. Thevoltage Vcal1 is a read voltage to which the correction value calculatedby the tracking read executed immediately before is applied. When thesequencer 17 asserts the signal STB while the voltage Vcal1 is appliedto the selected word line WLsel, data is read by the sense amplifiermodule 12.

The operations of steps S11 to S13 described above corresponds to afirst read operation. If the data DAT read by the shift read in step S13is sent to the controller 20, the ready/busy signal changes from “L”level to “H” level.

Next, the controller 20 issues a second command set CS2 (step S14), andsends the second command set CS2 to the semiconductor memory device 10.The second command set CS2 is a command sequence as illustrated in FIG.11.

Specifically, the command set CS2 is similar to the command set CS1illustrated in FIG. 10, except that the special command “xxh” isreplaced with a special command “yyh”. The command “yyh” is a commandinstructing the semiconductor memory device 10 to execute the shift readusing the correction value of the read voltage obtained by the mostrecent tracking read.

If the semiconductor memory device 10 receives such a command set CS2(command CMD and address information ADD), the input/output circuit 14of the semiconductor memory device 10 transfers the received command andaddress information, and write data to the command register 15C and theaddress register 15B, respectively. If the command “30h” is stored inthe command register 15C, the ready/busy signal is changed from “H”level to “L” level, and the sequencer 17 executes the shift read, duringwhich the correction value calculated by the most recent tracking readis applied, on a page to be read next (step S15).

Specifically, for example, as illustrated in FIG. 9, the row decoder 13applies the read voltage Vcal1 with the correction value obtained instep S11, to the selected word line WLsel different from the word lineon which the tracking read is executed in step S11. When the sequencer17 asserts the signal STB while the voltage Vcal1 is applied to theselected word line WLsel, data is read by the sense amplifier module 12.

The operation of step S15 described above corresponds to a second readoperation. As described above, in the second read operation, a shiftread using the correction value of the read voltage calculated by themost recent tracking read is executed, without executing the trackingread. If the data DAT read by the shift read in step S15 is sent to thecontroller 20, the ready/busy signal changes from “L” level to “H”level. In the example illustrated in FIG. 9, the second read operationby the command set CS2 is executed twice in succession.

Next, the controller 20 issues a third command set CS3 (step S16), andsends the third command set CS3 to the semiconductor memory device 10.The third command set CS3 is a command sequence as illustrated in FIG.12.

Specifically, the command set CS3 is similar to the command set CS1illustrated in FIG. 10, except that the special command “xxh” is notissued.

If the semiconductor memory device 10 receives such a command set CS3(command CMD and address information ADD), the input/output circuit 14of the semiconductor memory device 10 transfers the received command andaddress information, to the command register 15C and the addressregister 15B, respectively. If the command “30h” is stored in thecommand register 15C, the ready/busy signal is changed from “H” level to“L” level, and the sequencer 17 executes the normal read on the nextread page (step S17).

Specifically, for example, as illustrated in FIG. 9, the row decoder 13applies the read voltage Vdef to the selected word line WLsel. When thesequencer 17 asserts the signal STB while the voltage Vdef is applied tothe selected word line WLsel, data is read by the sense amplifier module12.

The operation of step S17 described above corresponds to a third readoperation. If the data DAT read by the normal read in step S17 is sentto the controller 20, the ready/busy signal changes from “L” level to“H” level.

Next, the controller 20 issues a command set CS1 (step S19), and sendsthe command set CS1 to the semiconductor memory device 10. Thus, thesemiconductor memory device 10 that receives the command set CS1executes the first read operation similar to steps S11 to S13.

Specifically, the tracking read is first executed on the page designatedby the sequencer 17 (step S19). Next, the sequencer 17 overwrites thecorrection value of the read voltage calculated by the tracking read instep S19 in the register REG (step S20). Subsequently, the sequencer 17applies the overwritten correction value to the register REG, andperforms the shift read on the page on which the tracking read isexecuted in step S19 (step S21).

In the example illustrated in FIG. 9, the read voltage Vcal2 is appliedto the selected word line WLsel, in the shift read of the second time ofthe first read operation. The voltage Vcal2 is a read voltage with thecorrection value obtained in step S19. Then, in the second readoperation by the subsequent command set CS2, the shift read usingvoltage Vcal2 is executed.

As described above, the semiconductor memory device 10 according to thepresent embodiment applies the correction value of the read voltageobtained by the tracking read to the shift read for other pages on whichthe tracking read is not performed. This correction value is updatedeach time the tracking read is executed.

In the above description, the read voltages Vcal1 and Vcal2 that havethe correction value obtained by the tracking read are each equal to oneof the voltages Vtr1 to Vtr5. In addition, the voltage Vcal1 and thevoltage Vcal2 may be different from each other or may the same as eachother.

In the above description, the read operation of the memory system 1includes the third read operation, but any other read operations can beincluded. For example, the third read operation may not be executed inthe read operation. In such a case, the read operation is executed usingtwo types of command sets (CS1 and CS2).

1-3. Effect of First Embodiment

Next, the effect of the first embodiment will be described. By thememory system 1 according to the present embodiment, it is possible tospeedup the operation. This effect will be described in detail below.

In the semiconductor memory device, the threshold voltage distributionof the memory cell spreads or shifts from the position where thethreshold voltage distribution should originally be, due to readdisturbance by the read operation after writing data, data retentionproblems caused by time lapse, or the like. Thus, the number of errorbits of the data read from the memory cell becomes large, and data maynot be correctly read in some cases.

For such a memory cell, a shift read using the corrected read voltage isexecuted. Thus, the semiconductor memory device can reduce the number oferror bits of data read from the memory cell, so that data can be readcorrectly. The correction value of the read voltage applied to the shiftread is calculated, for example, by the tracking read for the page fromwhich data is to be read.

However, the tracking read includes a plurality of read operations, andthe processing time is long. The tracking read is executed as a re-readoperation, for example, for the page where error correction by ECCbecomes impossible due to an increase in the number of error bits.Therefore, in the semiconductor memory device, if the number of degradedmemory cells increases, the number of occurrences of the tracking readincreases, and there is a possibility that the operation is delayed.

In order to reduce the number of tracking reads, it may be effective toexecute a shift read by predicting an appropriate read voltagebeforehand. Moreover, if the conditions under which the memory cellreceives read disturbance and the factors affecting data retention arethe same, it can be inferred that the result from the tracking readbecomes almost the same.

Therefore, the memory system 1 according to the present embodimentretains the correction value of the read voltage calculated by thetracking read in the semiconductor memory device 10. Then, thesemiconductor memory device 10 applies this correction value in theshift read of pages for which tracking read is not performed.

Specifically, the memory system 1 selectively uses a first readoperation of executing a tracking read and a shift read using thecorrection value of the read voltage calculated by this tracking read,and a second read operation of executing a shift read using thecorrection value of the read voltage calculated by the most recent firstread operation, according to the command set issued by the controller20.

More specifically, at the beginning of the read operation, thecontroller 20 issues a command set CS1 instructing the first readoperation, and when reading the subsequent page data, the controller 20issues the command set CS2 instructing the second read operation. Thecommand sets CS1 and CS2 include special commands as illustrated in FIG.10 and FIG. 11.

In this way, the number of error bits can be reduced, as compared withthe case of reading the data by using the preset read voltage, byexecuting a shift read using the correction value obtained by the mostrecent tracking read, on the page on which the tracking read is notperformed. Further, the controller 20 issues the command set CS1 at anytiming and updates the correction value of the read voltage, so that itis possible to use the more appropriate correction value of the readvoltage.

For example, the influence of disturbance received by data written tothe same block BLK may be almost the same. In this case, the controller20 instructs the first read operation for the page on which data is readfirst in each block BLK. Then, the controller 20 instructs the secondread operation when reading the data of the remaining page in thecorresponding block. That is, in this embodiment, the correction valueof the read voltage which has been calculated one time for each blockBLK is continuously used for that same block BLK.

As described above, the memory system 1 according to the presentembodiment can reduce the number of error bits in the read operation, sothat it is possible to reduce the frequency of execution of the re-readoperation by the tracking read when the memory cell is degraded. Thus,according to the memory system 1 of the present embodiment, it ispossible to speed up the operation.

In the read operation of the memory system 1 according to the presentembodiment, since the number of tracking reads is reduced as describedabove, the influence of read disturbance on memory cells is reduced.That is, in the memory system 1 according to the present embodiment, itis possible to reduce the change in the threshold voltage distributionof the memory cell due to the read disturbance, so that the reliabilityof the written data can be improved.

2. Second Embodiment

Next, a memory system 1 according to a second embodiment will bedescribed. The second embodiment is described as an example in which thecontroller 20 executes a shift read using the correction value obtainedby the most recent tracking read, without issuing a special command, inthe read operation described in the first embodiment above. In thefollowing, a difference from the first embodiment will be described.

2-1. Read Operation of Memory System 1

First, the read operation of the memory system 1 will be described.Whereas the semiconductor memory device 10 according to the firstembodiment executes the second read operation in response to the secondcommand set CS2, the semiconductor memory device 10 according to thepresent embodiment is used to execute the second read operation inresponse to the third command set CS3.

In the following, the specific example of the read operation of thememory system 1 will be described with reference to FIG. 13 and FIG. 14.FIG. 13 and FIG. 14 respectively illustrate the example of the readoperation as a flowchart and a timing chart. WLsel illustrated in FIG.14 indicates the voltage applied to the selected word line, and the wordline corresponding to the WLsel changes appropriately as the operationprogresses.

As illustrated in FIG. 13, first, the controller 20 issues a firstcommand set CS1 (step S10), and sends the first command set CS1 to thesemiconductor memory device 10. Since the operations of thesemiconductor memory device 10 based on the command set CS1 illustratedin FIG. 13 and FIG. 14 are the same as in the steps S11 to S13 describedin the first embodiment, the explanation thereof will be omitted.

Next, the controller 20 issues a third command set CS3 (step S30), andsends the third command set CS3 to the semiconductor memory device 10.If the semiconductor memory device 10 receives such a command set CS3,the input/output circuit 14 of the semiconductor memory device 10transfers the received command and address information, to the commandregister 15C and the address register 15B, respectively. If the command“30h” is stored in the command register 15C, the ready/busy signal ischanged from “H” level to “L” level, and the sequencer 17 executes theshift read, during which the correction value calculated by the mostrecent tracking read is applied, on a page to be read next (step S31).

That is, the semiconductor memory device 10 executes the second readoperation without receiving a special command such as a command “yyh”contained in the second command set CS2 described in the firstembodiment. Since the specific operation in step S31 is the same as instep S15 described in the first embodiment, the explanation thereof willbe omitted. In the example illustrated in FIG. 14, the second readoperation by the command set CS3 is executed twice in succession.

Next, the controller 20 issues a first command set CS1 (step S18), andsends the first command set CS1 to the semiconductor memory device 10.Since the operations of the semiconductor memory device 10 based on thecommand set CS1 illustrated in FIG. 13 and FIG. 14 are the same as inthe steps S19 to S21 described in the first embodiment, the explanationthereof will be omitted. Then, as illustrated in FIG. 14, in the secondread operation by the subsequent command set CS3, the shift read usingthe correction value of the read voltage calculated by the tracking readin step S19 is executed.

As described above, the semiconductor memory device 10 according to thepresent embodiment can execute a shift read, during which the correctionvalue of the read voltage obtained by the most recently executedtracking read is applied, in response to the command set CS3 withoutusing the special command.

2-2. Effect of Second Embodiment

Next, the effect of the second embodiment will be described. By thememory system 1 according to the present embodiment, the same effect asin the first embodiment can be achieved, and it is possible to furtherspeed up the operation than in the first embodiment. This effect will bedescribed in detail below.

In the memory system 1 according to the first embodiment, the first readoperation including a tracking read and the second read operation whichis a shift read using a correction value are executed using command setsCS1 and CS2 including the special command, respectively. On the otherhand, in the memory system 1 according to the present embodiment, acommand set CS3 which does not include a special command is used for acommand set instructing a second read operation.

Thus, in the memory system 1 according to the present embodiment, thecommand set CS3 which does not include the special command is used toexecute the second read operation, so that the command sequence can beshortened by not issuing the special command. That is, by the memorysystem 1 according to the present embodiment, the same effect as in thefirst embodiment can be achieved, and it is possible to further speed upthe operation than in the first embodiment.

3. Third Embodiment

Next, a memory system 1 according to a third embodiment will bedescribed. The third embodiment is described in which the semiconductormemory device 10 executes a tracking read, when the block address forreading data changes, in the read operation described in the secondembodiment. In the following, a difference from the first and secondembodiments will be described.

3-1. Read Operation of Memory System 1

First, the read operation of the memory system 1 will be described. Inthe read operation of the memory system 1 according to the presentembodiment, the controller 20 issues a first command set CS1 whenreading a first page, and issues a third command set CS3 when readingthe subsequent pages. The semiconductor memory device 10 normallyexecutes the second read operation in response to the third command setCS3, and executes the first read operation when the block addressincluded in the received third command set CS3 changes.

In the following, the specific example of the read operation of thememory system 1 will be described with reference to FIG. 15 and FIG. 16.FIG. 15 and FIG. 16 respectively illustrate the example of the readoperation as a flowchart and a timing chart. WLsel illustrated in FIG.16 indicates the voltage applied to the selected word line, and the wordline corresponding to the WLsel is changed appropriately as theoperation progresses.

As illustrated in FIG. 15, first, the controller 20 issues a firstcommand set CS1 (step S10), and sends the first command set CS1 to thesemiconductor memory device 10. Since the operations of thesemiconductor memory device 10 based on the command set CS1 illustratedin FIG. 15 and FIG. 16 are the same as in the steps S11 to S13 describedin the first embodiment, the explanation thereof will be omitted.

Next, the controller 20 issues a third command set CS3 (step S40), andsends the third command set CS3 to the semiconductor memory device 10.If the semiconductor memory device 10 receives such a command set CS3,the input/output circuit 14 of the semiconductor memory device 10transfers the received command and address information, to the commandregister 15C and the address register 15B, respectively. If the command“30h” is stored in the command register 15C, the ready/busy signal ischanged from “H” level to “L” level, and the sequencer 17 determineswhether or not the designated block address changes from the blockaddress of the page from which data has been read at the previous time(step S41).

If the block address does not change (No in step S41), the sequencer 17executes the second read operation. That is, the sequencer 17 executesthe shift read, during which the correction value calculated by the mostrecent tracking read is applied (step S42).

In contrast, if the block address changes (Yes in step S41), thesemiconductor memory device 10 executes the first read operation.Specifically, the sequencer 17 first executes a tracking read (stepS43). Next, the sequencer 17 overwrites the correction value of the readvoltage calculated by the tracking read in step S43 in the register REG(step S44), and performs the shift read for the same page with thecorrection value (step S45). The operations of steps S43 to S45 are thesame as the steps S19 to S21 which are described in the firstembodiment.

In other words, the semiconductor memory device 10 executes a shift readusing the correction value as when the block address has not changed,and executes a shift read in which the correction value is updated by atracking read when the block address changes. In the read operation ofthe subsequent page, the above-mentioned step S40 and the subsequentoperations are repeated.

The example illustrated in FIG. 16 represents operations when the firstread operation by the command set CS1 is executed at the beginning ofthe read operation, and the block address is changed by the command setCS3 issued at the third time in the subsequent read operations.

As described above, the semiconductor memory device 10 in the memorysystem 1 according to the present embodiment responds to the command setCS3 issued by the controller 20 and confirms the block address to whichdata is written, so that the first read operation and second readoperations can be used selectively.

3-2. Effect of Third Embodiment

Next, the effect of the third embodiment will be described. By thememory system 1 according to the present embodiment, the same effect asin the first embodiment can be achieved, and it is possible to furtherspeed up the operation than in the first embodiment. This effect will bedescribed in detail below.

As described in the section on the effect of the first embodiment, theinfluence of the disturbance received by data written in the same blockBLK is considered to be almost the same, and it can be inferred that theresults of tracking read in the same block BLK are almost the same.

Therefore, the semiconductor memory device 10 in the memory system 1according to the present embodiment executes the tracking read inresponse to the command set CS1 including the special command at thebeginning of the read operation, and then executes the shift read on thesubsequent pages in response to the command set CS3 without includingthe special command. When detecting that the block address designated bythe received command set CS3 changes, the semiconductor memory device 10executes a tracking read and updates the correction value of the readvoltage applied to the subsequent shift reads.

As described above, the memory system 1 according to the presentembodiment determines whether or not the semiconductor memory device 10executes a tracking read, regardless of the instruction of thecontroller 20. That is, the controller 20 may issue a command set CS1including a special command only at the beginning of the read operation,and issue a command set CS3 without including a special command in thesubsequent read operations.

Thus, in the memory system 1 according to the present embodiment, thecontroller 20 can shorten the command sequence in the read operation, bynot issuing the special command. That is, by the memory system 1according to the present embodiment, the same effect as in the firstembodiment can be achieved, and it is possible to further speed up theoperation than in the first embodiment.

4. Fourth Embodiment

Next, a memory system 1 according to a fourth embodiment will bedescribed. The fourth embodiment is described as an example in which atracking read is executed upon detecting that a specific word line WL isselected within the semiconductor memory device 10, in the readoperation described in the second embodiment. In the following, adifference from the first to third embodiments will be described.

4-1. Read Operation of Memory System 1

First, the read operation of the memory system 1 will be described. Inthe read operation of the memory system 1 according to the presentembodiment, the controller 20 issues a first command set CS1 whenreading a first page, and issues a third command set CS3 when readingthe subsequent pages, similar to the third embodiment. The semiconductormemory device 10 normally executes the second read operation in responseto the third command set CS3, and executes the first read operation whenthe address included in the received third command set CS3 correspondsto a specific word line. As this specific word line, for example, a wordline located at the end of each block BLK can be designated.

In the following, the specific example of the read operation of thememory system 1 will be described with reference to FIG. 17 and FIG. 18.FIG. 17 and FIG. 18 respectively illustrate the example of the readoperation as a flowchart and a timing chart. WLsel illustrated in FIG.18 indicates the voltage applied to the selected word line, and the wordline corresponding to the WLsel changes as the operation progresses.

As illustrated in FIG. 17, first, the controller 20 issues a firstcommand set CS1 (step S10), and sends the first command set CS1 to thesemiconductor memory device 10. Since the operations of thesemiconductor memory device 10 based on the command set CS1 illustratedin FIG. 17 and FIG. 18 are the same as in the steps S11 to S13 describedin the first embodiment, the explanation thereof will be omitted.

Next, the controller 20 issues a third command set CS3 (step S50), andsends the third command set CS3 to the semiconductor memory device 10.If the semiconductor memory device 10 receives such a command set CS3,the input/output circuit 14 of the semiconductor memory device 10transfers the received command and address information, to the commandregister 15C and the address register 15B, respectively. If the command“30h” is stored in the command register 15C, the ready/busy signal ischanged from “H” level to “L” level, and the sequencer 17 determineswhether or not a specific word line is selected based on the receivedaddress information (Step S51). That is, in step S51, the sequencer 17determines whether or not the word line correlated with the page to beread next is a specific word line.

If the specific word line WL is not selected (No in step S51), thesequencer 17 executes the second read operation. That is, the sequencer17 executes the shift read, during which the correction value calculatedby the most recent tracking read is applied (step S55).

If the specific word line WL is selected (Yes in step S51), thesequencer 17 executes the first read operation. Specifically, thesequencer 17 first executes a tracking read (step S53). Next, thesequencer 17 overwrites the correction value of the read voltagecalculated by the tracking read in step S53 in the register REG (stepS54), and performs the shift read for the same page with the correctionvalue (step S55). The operations of steps S52 to S54 are the same as thesteps S19 to S21 which are described in the first embodiment.

That is, when an address correlated with the specific word line WL isnot selected, the semiconductor memory device 10 executes a shift readusing the current correction value, and when an address correlated withthe specific word line WL is selected, the semiconductor memory device10 executes a shift read by updating the correction value. In the readoperation of the subsequent page, the above-mentioned step S50 and thesubsequent operations are repeated.

The example illustrated in FIG. 18 represents operations when the firstread operation by the command set CS1 is executed at the beginning ofthe read operation, and the specific word line WL is selected by thecommand set CS3 issued at the third time in the subsequent readoperations.

As described above, the semiconductor memory device 10 in the memorysystem 1 according to the present embodiment responds to the command setCS3 issued by the controller 20 and determines whether or not thespecific word line WL is selected, so that the first read operation andsecond read operations can be used selectively.

4-2. Effect of Fourth Embodiment

Next, the effect of the fourth embodiment will be described. By thememory system 1 according to the present embodiment, the same effect asin the third embodiment can be achieved, and it is possible to furtherspeed up the operation than in the third embodiment. This effect will bedescribed in detail below.

In the semiconductor memory device, the characteristics of the memorycell may differ depending on the position where the memory cell isformed. For example, in each NAND string, the characteristic variationacross the memory cell located in the center portion is small, and thecharacteristic variation across the memory cell located at the endbecomes large.

When such characteristic variations occur depending on positions, evenif a shift read is executed by applying the correction value obtained bythe tracking read of another page, re-read may be executed morefrequently.

Therefore, similar to the third embodiment, the semiconductor memorydevice 10 in the memory system 1 according to the present embodimentexecutes the tracking read in response to the command set CS1 includingthe special command at the beginning of the read operation, and thenexecutes the shift read on the subsequent pages in response to thecommand set CS3 without including the special command. When detectingthat the specific word line WL is selected by the received command setCS3, the semiconductor memory device 10 executes a tracking read andupdates the correction value of the read voltage applied to thesubsequent shift reads.

As described above, similar to the third embodiment, the memory system 1according to the present embodiment determines whether or not thesemiconductor memory device 10 executes a tracking read, regardless ofthe instruction of the controller 20. Therefore, the controller 20 mayissue a command set CS1 including a special command only at thebeginning of the read operation, and issue a command set CS3 withoutincluding a special command in the subsequent read operations.

Thus, in the memory system 1 according to the present embodiment,similar to the third embodiment, the controller 20 can shorten thecommand sequence in the read operation by not issuing the specialcommand. In the memory system 1 according to the present embodiment,since the semiconductor memory device 10 executes the tracking read withrespect to the portion where the possibility of re-read is high, thefrequency of re-read can be reduced. That is, by the memory system 1according to the present embodiment, the same effect as in the thirdembodiment can be achieved, and it is possible to further speed up theoperation than in the third embodiment.

5. Fifth Embodiment

Next, a memory system 1 according to a fifth embodiment will bedescribed. The fifth embodiment is described as an example in which flaginformation is written in the redundant area of each page, and atracking read is executed based on this flag information. In thefollowing, a difference from the first to fourth embodiments will bedescribed.

5-1. Operation

5-1-1. Overview of Operation of Memory System 1

First, the overview of the operation of the memory system 1 will bedescribed. In the memory system 1 according to the present embodiment,flag information is used in a write operation and a read operation.

The flag information is information capable of identifying a time whendata of the corresponding page is written. As this flag information, forexample, information about the time when write data is received from theexternal host, information referring to a part of the addressinformation, and the like are used.

In the write operation, flag information is generated by the controller20 and is added to the input/output signal I/O transmitted by thecontroller 20 to the semiconductor memory device 10. The flaginformation is written in the redundant area of each page in thesemiconductor memory device 10.

In the read operation, the flag information is retrieved before data isread by the semiconductor memory device 10. Then, the semiconductormemory device 10 executes the first read operation including a trackingread, or the second read operation which is a shift read applying thecorrection value obtained by the most recent tracking read, based on theflag information.

5-1-2. Write Operation of Memory System 1

In the following, the specific example of the write operation of thememory system 1 will be described with reference to FIG. 19. FIG. 19illustrates an example of a write operation in a flowchart.

As illustrated in FIG. 19, first, the controller 20 receives write dataand address information from an external host (not illustrate) (stepS60). The write data and the address information are temporarilyretained in the buffer memory 25 through the host I/F 26.

Next, the NAND I/F 24 of the controller 20 issues a write command andadds flag information FLG to the write data (step S61). This flaginformation FLG is added, for example, to the end of the write data soas to be written in the redundant area of the page to be written. Then,the NAND I/F 24 transmits the issued write command, write data includingthe flag information FLG, and address information, to the semiconductormemory device 10, as an input/output signal I/O.

Next, the semiconductor memory device 10 executes a write operation,based on the write data DAT, the command CMD, and the addressinformation ADD, which are received from the controller 20 (step S62).Thus, data is stored in the data area of the corresponding page, and theflag information FLG is stored in the redundant area.

Alternatively, those other than the NAND I/F 24 may issue a writecommand in step S61. For example, the CPU 21 may issue a write command.Similarly, those other than the NAND I/F 24 may generate the flaginformation FLG in step S61. For example, the CPU 21 may generate theflag information FLG and transfer the generated flag information FLG tothe NAND I/F 24 or the buffer memory 25 so as to be added to the writedata.

In addition, it is preferable that the flag information is stored in amemory cell by applying a single level cell (SLC) method of storingone-bit of data, but any other method can be applied, and the flaginformation may be stored in the memory cell by applying an MLC method.

5-1-3. Read Operation of Memory System 1

Next, the read operation of the memory system 1 will be described. Thememory system 1 according to the present embodiment can execute the readoperation described below with one type of command set (for example, thecommand set CS3). In the read operation, the semiconductor memory device10 first executes the flag read in response to the command set receivedfrom the controller 20, and then executes the first read operation orthe second read operation.

The flag read is a read operation of reading the flag information storedin the redundant area of each page. The flag information read by thisflag read is transferred to the sequencer 17, and the sequencer 17executes the first read operation or the second read operation for thepage based on this flag information.

In the following, the specific example of the read operation of thememory system 1 will be described with reference to FIG. 20 and FIG. 21.FIG. 20 and FIG. 21 respectively illustrate the example of the readoperation as a flowchart and a timing chart. WLsel illustrated in FIG.21 indicates the voltage applied to the selected word line, and the wordline corresponding to the WLsel changes appropriately as the operationprogresses.

First, the controller 20 issues a third command set CS3 (step S70), andsends the third command set CS3 to the semiconductor memory device 10.If the semiconductor memory device 10 receives such a command set CS3,the input/output circuit 14 of the semiconductor memory device 10transfers the received command and address information, to the commandregister 15C and the address register 15B, respectively. If the command“30h” is stored in the command register 15C, the ready/busy signal ischanged from “H” level to “L” level, and the sequencer 17 first executesthe flag read for the designated page (step S71).

Specifically, for example, as illustrated in FIG. 21, the row decoder 13applies the read voltage Vflg to the selected word line WLsel. Thevoltage Vflg is a read voltage for reading the flag information FLGstored in the redundant area of each page, and is set based on thewriting method of the flag information FLG. When the sequencer 17asserts the signal STB while the voltage Vflg is applied to the selectedword line WLsel, data is read by the sense amplifier module 12.

Subsequently, the sense amplifier module 12 transfers the flaginformation FLG included in the redundant area of the one page of theread data to the sequencer 17, and the sequencer 17 retains this flaginformation in, for example, the register REG (step S72).

Next, the semiconductor memory device 10 executes the first readoperation. Specifically, the tracking read is first executed on the pageon which the sequencer 17 executes the flag read (step S73). Next, thesequencer 17 stores the correction value of the read voltage calculatedby the tracking read, in the register REG (step S74). Subsequently, thesequencer 17 executes the shift read of the same page by applies thecorrection retained in the register REG (step S75). Since the specificoperation is the same as in steps S11 to S13 described in the firstembodiment, the explanation thereof will be omitted.

Next, the controller 20 issues a command set CS3 (step S76), and sendsthe command set CS3 to the semiconductor memory device 10. Then, thesequencer 17 executes a flag read for the page to be read next, based onthe command set CS3 (step S77). In other words, the sequencer 17executes the flag read on the selected word line WLsel different fromthe word line on which the flag read is executed in step S71. Since theoperations of steps S76 and S77 are the same as the operations of stepsS70 and S71, the explanation thereof will be omitted.

Next, the sequencer 17 compares the read flag information FLG with theflag information FLG retained in the register REG, and determineswhether or not the flag information FLG changes from the previous flagread result (step S78).

If the flag information FLG does not change (No in step S78), thesequencer 17 executes the second read operation. That is, the sequencer17 executes the shift read, during which the correction value calculatedby the most recent tracking read is applied, on a page on which the flagread is executed in step S77 (step S79).

On the other hand, if the flag information FLG changes (Yes, in stepS78), the sequencer 17 overwrites the changed flag information FLG tothe register REG (step S80), and executes the first write operation.Specifically, the tracking read is first executed on the page on whichthe sequencer 17 executes the flag read in step S77 (step S81). Next,the sequencer 17 overwrites the correction value of the read voltagecalculated by the tracking read in the register REG (step S82), andperforms the shift read for the same page with the correction value(step S83). The operations of steps S80 to S82 are the same as the stepsS19 to S21 which are described in the first embodiment.

In other words, the semiconductor memory device 10 executes a shift readon the page retaining the same flag information with the correctionvalue as it is, and executes a shift read in which the correction valueis updated by a tracking read, when the flag information is changed. Inthe read operation of the subsequent page, the step S76 and thesubsequent operations are repeated.

Further, the example illustrated in FIG. 21 represents operations whenthe read flag information pieces FLG1 and FLG2 change, in the flag readof the semiconductor memory device 10 by the command set CS3 issued bythe controller 20 at the fourth time.

As described above, the semiconductor memory device 10 according to thepresent embodiment executes the flag read and the tracking read at thebeginning of the read operation, and retains the flag information FLGand the correction value of the read voltage in the register REG. In thesubsequent read operations, the semiconductor memory device 10 executesa shift read using the same correction value for the page retaining thesame flag information, and executes a tracking read every time the flaginformation is changed.

In the above description, the case where the SLC method is applied whenthe flag information is written in the redundant area is described as anexample, but other cases are possible. For example, when the flaginformation is written by the MLC method, a read operation using aplurality of read voltages is executed in flag read of the readoperation.

In the above description, the case where the read operation is executedusing the command set CS3 is described as an example, but other casesare possible. For example, the read operation may be executed using acommand set including the special command such as the command set CS1.

5-2. Effect of Fifth Embodiment

Next, the effect of the fifth embodiment will be described. By thememory system 1 according to the present embodiment, the same effect asin the first embodiment can be achieved, and it is possible to furtherspeed up the operation than in the first embodiment. This effect will bedescribed in detail below.

In the memory system 1 according to the first embodiment, the first readoperation including a tracking read and the second read operation whichis a shift read using a correction value are used selectively by aplurality of command sets.

On the other hand, in the memory system 1 according to the presentembodiment, the controller 20 generates flag information indicating atime when each page data is written, and the semiconductor memory device10 writes this flag information in the redundant area of each page. Thesemiconductor memory device 10 selectively uses the first read operationand the second read operation, with reference to the flag informationduring the read operation.

Specifically, the semiconductor memory device 10 first executes a flagread to read the flag information at the time of the read operation ofeach page. The read flag information is retained in the semiconductormemory device 10, and is compared with the flag information correlatedwith the page read prior to the corresponding page. Then, thesemiconductor memory device 10 executes the first read operation whenthe compared flag information pieces are different, and executes thesecond read operation when the compared flag information pieces are thesame.

In this way, the semiconductor memory device 10 executes the second readoperation on the page storing the same flag information, and updates thecorrection value of the read voltage by executing the first readoperation each time the flag information is changed. That is, thesemiconductor memory device 10 can apply the correction value of thesame read voltage, for example, in units of files such as image data anddocument data.

Thus, the memory system 1 according to the present embodiment can definea range using the correction value of the read voltage in units largerthan the block, and reduce the frequency of executing the tracking read.That is, by the memory system 1 according to the present embodiment, thesame effect as in the first embodiment can be achieved, and it ispossible to further speed up the operation than in the first embodiment.

6. Sixth Embodiment

Next, a memory system 1 according to a sixth embodiment will bedescribed. Whereas the controller 20 generates the flag information inthe fifth embodiment, the sixth embodiment is described as an example inwhich the semiconductor memory device 10 generates flag information. Inthe following, a difference from the first to fifth embodiments will bedescribed.

6-1. Write Operation of Memory System 1

First, the specific example of the write operation of the memory system1 will be described with reference to FIG. 22. FIG. 22 illustrates anexample of a write operation in a flowchart.

First, the controller 20 receives write data and address informationfrom an external host (not illustrated) (step S90). The write data andthe address information are temporarily retained in the buffer memory 25through the host I/F 26.

Next, the NAND I/F 24 of the controller 20 issues a write command (stepS91). Then, the NAND I/F 24 transmits the issued write command, writedata, and address information, to the semiconductor memory device 10, asan input/output signal I/O.

Next, the input/output circuit 14 of the semiconductor memory device 10transfers the command CMD, the address information ADD, and the writedata DAT, which are received from the controller 20, to a commandregister 15C, the address register 15B, and the latch circuit XDL of thesense amplifier module 12, respectively. Then, the sequencer 17generates flag information (step S92) and transfers the flag informationto the latch circuit XDL of the sense amplifier unit SAU connected tothe memory cell in the redundant area. As this flag information, forexample, a part of the received address information is used.

Next, the sequencer 17 executes the write operation based on the commandCMD transferred to the command register 15C (step S93). Thus, data iswritten in the data area of the corresponding page, and flag informationis written in the redundant area.

The flag information written in this redundant area is set to the sameflag information FLG while executing, for example, a cache writeoperation. The cache write operation is used to execute the transfer ofone page of data from the controller 20 to the semiconductor memorydevice 10 and the write operation of one page of data of thesemiconductor memory device 10 in parallel.

In the following, the specific example of the cache write operation willbe described with reference to FIG. 23. FIG. 23 illustrates an exampleof the cache write operation in a flowchart.

As illustrated in FIG. 23, first, the controller 20 issues a fourthcommand set CS4 (step S100), and sends the fourth command set CS4 to thesemiconductor memory device 10. The command sequence corresponding tothis fourth command set CS4 is illustrated in FIG. 24.

Specifically, the controller 20 first issues a write command “80h”, andthen sends the write command “80h” to the semiconductor memory device10. The command “80h” is a command instructing write operation. Next,the controller 20 issues address information ADD, for example, for fivecycles, and sends the information ADD to the semiconductor memory device10. This address information ADD is used to designate the address. Next,the controller 20 outputs write data Din, for example, for a pluralityof cycles to the semiconductor memory device 10. The data Din outputcorresponds to data of one page in total. Next, the controller 20 issuesthe command “15h” and sends it to the semiconductor memory device 10.The command “15h” is a command for causing the semiconductor memorydevice 10 to execute a cache write operation based on the addressinformation and data Din which are sent immediately before.

If the semiconductor memory device 10 receives such a command set CS4(command CMD, address information ADD, and write data DAT), theinput/output circuit 14 of the semiconductor memory device 10 transfersthe received command, address information, and write data to the commandregister 15C, the address register 15B, and the latch circuit XDL of thesense amplifier module 12, respectively. If the command “15h” is storedin the command register 15C, the ready/busy signal is changed from “H”level to “L” level, and the sequencer 17 starts a cache write operation.

In the cache write operation, first, the sense amplifier module 12transfers the write data which is transferred to the latch circuit XDL,to the latch circuit SDL (step S101). Upon detecting completion of thedata transfer in step S101, the sequencer 17 controls the ready/busycontrol circuit 18 so as to change the ready/busy signal from “L” levelto “H” level.

Subsequently, the sequencer 17 starts a write operation of 1 page data(step S102). The controller 20 issues a fourth command set CS4 includingthe write data of the next page (step S103) in parallel with the startof a write operation by the semiconductor memory device 10, and sendsthe fourth command set CS4 to the semiconductor memory device 10. Thetransmitted write data in step S103 is retained in the latch circuit XDLof the sense amplifier module 12 through the input/output circuit 14.

If the write operation is completed, the sequencer 17 controls the senseamplifier module 12 so as to transfer the write data which istransferred to the latch circuit XDL, to the latch circuit SDL (stepS104). The sequencer 17 sets the ready/busy signal to “L” level whileperforming data transfer in step S104, and changes the ready/busy signalto “H” level, if data transfer is completed.

As described above, in the cache write operation, the transfer of writedata from the controller 20 to the semiconductor memory device 10, andthe write operation of the semiconductor memory device 10 are executedin parallel. The operations of steps S102 to S104 are repeated until theamount of the data to be written to the semiconductor memory device 10is equal to or less than one page.

If the amount of write data is equal to or less than one page, thecontroller 20 issues a fifth command set CS5 instructing a normal writeoperation (step S106), and sends the fifth command set CS5 to thesemiconductor memory device 10. The command sequence corresponding tothis fifth command set CS5 is illustrated in FIG. 24.

Specifically, the command set CS5 is similar to the command set CS4,except that the command “15h” is replaced with a command “10h”. Thecommand “10h” is a command for causing the semiconductor memory device10 to execute a normal write operation based on the address informationand data Din which are sent immediately before.

If the semiconductor memory device 10 receives such a command set CS5(command CMD, address information ADD, and write data DAT), theinput/output circuit 14 of the semiconductor memory device 10 transfersthe received command, address information, and write data to the commandregister 15C, the address register 15B, and the latch circuit XDL of thesense amplifier module 12, respectively. If the command “10h” is storedin the command register 15C, the ready/busy signal is changed from “H”level to “L” level, and the sequencer 17 starts a normal writeoperation.

If the write operation of the previous page is completed, the senseamplifier module 12 transfers the write data which is transferred to thelatch circuit XDL, to the latch circuit SDL (step S107). Subsequently,the sequencer 17 executes a write operation of remaining 1 page data(step S108). If the write operation is completed, the sequencer 17controls the ready/busy control circuit 18 so as to set the ready/busysignal to “H” level.

The command sequence illustrated in FIG. 24 corresponds to the flowchartillustrated in FIG. 23. Specifically, FIG. 24 illustrates a commandsequence when 3 pages of data are written with two cache writeoperations and one normal write operation.

tDLtrans and tProg indicated in FIG. 24 respectively correspond to aperiod during which data transfer between latches is performed in thecache write operation and a period during which a normal write operationis executed, and it is established that tDLtrans<tProg. As describedabove, in the cache write operation, the write operation of 1 page databy the semiconductor memory device 10 may be completed while thecontroller 20 transmits the input/output signal I/O.

As described above, in the cache write operation, 1 page data is writtencontinuously based on the command set CS4. In the semiconductor memorydevice 10 according to the present embodiment, for example, the sameflag information FLG is shared, with the cache write operation to becontinuously executed and the last normal write operation as one group.

In other words, the semiconductor memory device 10 according to thepresent embodiment writes the same flag information FLG to the redundantarea of each page, until the normal write operation is executed by thecommand set CS5 after the cache write operation based on the command setCS4 is started. In this embodiment, the timing at which the sequencer 17of the semiconductor memory device 10 generates the flag information FLGand transfers the flag information FLG to the corresponding senseamplifier unit SAU may be a period during reception of each command set,or a time before data transfer between latches is performed after thecommand “15h” or the command “10h” are received.

In the above description, the latch circuit LDL or UDL other than thelatch circuit SDL may be used as a destination latch circuit to whichdata is transferred from the latch circuit XLD based on the commands“15h” and “10h”.

In addition, when the controller 20 is configured to know the operationstate of the semiconductor memory device 10 by a status read command,the controller 20 issues the status read command at predeterminedintervals after issuing each command set. Then, the controller 20detects completion of the data transfer in the step S102, S104, or S107,with reference to the status information output from the semiconductormemory device 10.

The cache read operation described above is described, for example, inU.S. patent application Ser. No. 10/318,167 filed on Dec. 13, 2002,entitled “SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAILRESULTS OF INTERNAL OPERATIONS.” This patent application is incorporatedherein by reference in its entirety.

6-2. Effects of Sixth Embodiment

Next, the effect of the sixth embodiment will be described. By thememory system 1 according to the present embodiment, the same effect asin the fifth embodiment can be achieved. This effect will be describedin detail below.

Whereas the controller 20 generates the flag information FLG in thememory system 1 according to the fifth embodiment, the semiconductormemory device 10 generates the flag information FLG in the memory system1 according to the present embodiment. In this manner, the flaginformation FLG may be generated within the semiconductor memory device10, and the semiconductor memory device 10 executes writing of the flaginformation FLG together with the data received from the controller 20.

With this, by the memory system 1 according to the present embodiment,the same read operation can be operated as in the fifth embodiment. Thatis, the memory system 1 according to the present embodiment can reducethe frequency of executing the tracking read, and can achieve the sameeffect as in the fifth embodiment.

Further, the semiconductor memory device 10 according to the presentembodiment generates flag information regardless of the command issuedby the controller 20. That is, the semiconductor memory device 10according to the present embodiment can execute the write operation andthe read operation, without causing the controller 20 to use a specialcommand sequence.

7. Modification Example or the Like

A semiconductor memory device <10 in FIG. 1> according to the embodimentincludes a plurality of first and second memory cells, first and secondword lines which are respectively connected to the plurality of firstand second memory cells, and a control circuit that executes a readoperation in response to each of externally received first and secondcommand sets <CS1 and CS2 in FIG. 9>. The control circuit can executethe first and second read sequences during the read operation. In thefirst read sequence <tracking read in FIG. 9>, respective pieces of dataare read using first to third voltages which are different from eachother. In the second read sequence <shift read in FIG. 9>, data is readusing a voltage based on the result of the first read sequence. In readoperations of a plurality of first memory cells based on the firstcommand set, first and second read sequences are sequentially executed.In the read operations of a plurality of second memory cells based onthe second command set, subsequent to the read operations of theplurality of first memory cells, the second read sequence is executedusing a voltage based on the result of the first read sequence in theread operation of the plurality of first memory cells.

In addition, the memory system <1 in FIG. 1> according to the aboveembodiment includes a semiconductor memory device <10 in FIG. 1>according to the above embodiment and a controller <20 in FIG. 1>capable of issuing first and second command sets.

Thus, it is possible to provide a semiconductor memory device and amemory system, which can speed up an operation.

Any embodiments other than the above first to sixth embodiments arepossible, and various modifications are possible. For example, withrespect to the embodiment, the case of reading one page of data from thememory cells connected to the same word line WL is described as anexample, but other cases are possible. For example, the embodiment canalso be applied to the case of reading data of two pages or more fromthe memory cells connected to the same word line WL, or the case ofreading one page of data out of a plurality of pages from the memorycells connected to the same word line WL.

For example, in the case of reading data of two pages or more from thememory cells connected to the same word line WL, or the case of readingone page of data out of a plurality of pages from the memory cellsconnected to the same word line WL, a plurality of levels of readoperations are required to determine page data to be read. In this case,after the tracking reads correlated with the respective levels areconsecutively executed, the shift reads correlated with the respectivelevels are executed thereafter to which the correction value obtained bythese tracking reads are applied.

The memory cell stores a plurality of bits of information as describedabove. When the read voltages correlated with a plurality of levels ofthreshold voltage distributions are used, the correction value of theread voltage is calculated for each read voltage correlated with eachlevel and is retained in the register REG within the sequencer 17.

In the above embodiment, with respect to the method of calculating thecorrection value in the tracking read, the case where the difference inthe number of on-cells is used is described as an example, but any othercases are possible. For example, when the semiconductor memory device 10includes an ECC circuit, a read voltage by which the number of errorbits is the smallest in the tracking read may be used as an optimum readvoltage. In this case, the optimum read voltage may be a read voltagedifferent from the read voltage applied in the tracking read.

In the above embodiment, the case where the register REG in thesequencer 17 is used as the destination for storing the correction valueof the read voltage obtained by the tracking read by the semiconductormemory device 10 is described as an example, but any other cases arepossible. For example, an area for retaining the correction value may beformed in the area of the register 15, or may be formed in the inside ofthe semiconductor memory device 10.

In the above embodiment, the case where the correction values of theread voltages obtained by the second and subsequent tracking reads bythe semiconductor memory device 10 are overwritten to the previouslyobtained correction value is described as an example, but any othercases are possible. For example, the correction value obtained by thetracking read may not be overwritten, but may be stored in a differentplace. Even in this case, if a new correction value is retrieved in thesubsequent shift reads, it is possible to achieve the effect asdescribed in the above embodiment.

Further, in the above embodiment, there is a period during which voltageis not applied between the tracking read and the shift read in the firstread operation, but any other cases are possible. For example, after thetracking read is executed, the shift read may be executed consecutively.In this case, the correction value of the optimum read voltage iscalculated in a state in which the read voltage is applied in thetracking read, and then the read voltage using the calculated correctionis applied.

In the above embodiment, the case where the read voltage used for theshift read is set by the correction value obtained by the tracking readis described as an example, but other cases are possible. For example,the correction value from the normal read voltage is not calculated bythe tracking read, but an optimum read voltage value itself may becalculated, and stored in the register REG of the sequencer 17. In theshift read in this case, a read operation uses the optimum read voltagestored in the register REG as is.

In the above embodiment, the optimum read voltage, to which thecorrection value obtained by the tracking read is applied, may not beany one of the plurality of read voltages applied to the tracking read.Instead of using one of the voltages Vtr1 to Vtr5 illustrated in FIG. 6,a voltage between these voltages may be designated as the optimum readvoltage.

In the second to fourth embodiments, the case where the first commandset CS1 is used to execute the first read operation including thetracking read at the beginning of the read operation is described as anexample, but any other cases are possible. For example, it may be set toexecute the first read operation, when the semiconductor memory device10 receives the third command set CS3 from the controller 20 at thebeginning of the read operation. In this case, the operations of thesecond to fourth embodiments can be executed without using the commandset CS1 including the special command.

In the second to the fourth embodiments, the first read operation may beexecuted based on the third command set, and the second read operationwhich is the shift read, during which the most recent tracking readresult is applied, may be executed based on the first command set.Another example of the command sequence and the waveform in this case isillustrated in FIG. 25. In FIG. 25, the type of the command setinstructing the first and second read operations is different from FIG.9 illustrated in the second embodiment. Incidentally, this operation canbe similarly applied to the third and fourth embodiments.

In the fifth and sixth embodiments, when data to be written is less thanone page, data may be written from the unwritten area of the page in thesubsequent write operation. In this way, as flag information for a pageincluding memory cells with different write timings, flag information atthe timing when writing is performed at the beginning of the page may beadded, or flag information at the timing when writing is performed atthe end of page may be added.

In the above embodiment, the case is described as an example where thecorrection value of the optimum read voltage is calculated and the firstread operation for executing the read operation based on the correctionvalue is a pair of the tracking read and the shift read, but any othercases are possible. For example, only the tracking read may be executedin the first read operation, and optimum data may be extracted from theread result of the tracking read.

In this case, for example, all pieces of data read by the tracking readare retained in the sense amplifier module 12. After calculating thecorrection value of the optimum read voltage, the sequencer 17 controlsthe sense amplifier module 12 so as to transfer read data based on thiscorrection value or data correlated with the read data close thereto tothe latch circuit XDL, and output the read data or the correlated datato the controller 20 through the input/output circuit 14. An example ofthe command sequence and the waveform in the case where such anoperation is applied to the first embodiment is illustrated n FIG. 26.FIG. 26 is different from FIG. 9 described in the first embodiment inthat the shift read in the first read operation is omitted. Even in sucha case, a shift read in which the result of the most recent trackingread can be executed. In addition, this operation can be similarlyapplied to the second to sixth embodiments.

In the above-described embodiment, the data read in the first to thirdread operations sometimes fails in the error correction of thecontroller 20 (ECC error). When such an ECC error occurs, the controller20 may calculate the correction value of the optimum read voltage basedon this read data, and execute a retry read on a portion which is failedin the reading of data. An example of a case where a retry read occursin the operation of the memory system 1 described in the firstembodiment will be described below with reference to FIG. 27 and FIG.28. FIG. 27 and FIG. 28 respectively illustrate the example of the retryread as a flowchart and a timing chart.

As illustrated in FIG. 27, first, the controller 20 issues a firstcommand set CS1 (step S110), and sends the first command set CS1 to thesemiconductor memory device 10. Then, the semiconductor memory device 10performs a first read operation in response to the command set CS1.Specifically, the sequencer 17 performs tracking read (step S111),stores a correction value obtained by the tracking read (step S112), andperforms shift read based on the correction value (step S113). Theoperations of step S110 to S113 are the same as the steps S10 to S13which are described with reference to FIG. 8 in the first embodiment.

When receiving data DAT which is read by the shift read in step S113,the controller 20 performs an error correction process. In this example,the controller 20 fails in error correction of the read data (stepS114). If such an ECC error occurs, the controller 20 calculates anoptimum read voltage based on the data DAT which is read by the shiftread in step S113 (step S115). The controller 20 issues a sixth commandset CS6 instructing a retry read using the calculated optimum readvoltage (step S116), and sends the sixth command set CS6 to thesemiconductor memory device 10.

The sixth command set CS6 is a command sequence as illustrated in FIG.29. Specifically, the command set CS6 is similar to the command set CS1illustrated in FIG. 10, except that the special command “xxh” isreplaced with a special command “zzh”. The command “zzh” instructs thesemiconductor memory device 10 to perform the shift read using the readvoltage designated by the controller 20.

The semiconductor memory device 10 that receives the command set CS6(commands CMD and address information ADD) performs the shift read usingthe optimum read voltage calculated by the controller 20, on the samepage as in step S113 (step S117). In other words, the semiconductormemory device 10 performs a retry read using the optimum read voltagecalculated by the controller 20, on the page in which an ECC erroroccurs. The correction value correlated with the optimum read voltagethat the semiconductor memory device 10 receives from the controller 20at this time is retained in the register REG in the sequencer 17.

If the data DAT read by the shift read in step S117 is sent to thecontroller 20, the controller 20 issues a second command set CS2. Whenreceiving the second command set CS2 from the controller 20, thesemiconductor memory device 10 performs the shift read using the readvoltage which is used in step S117, on the subsequent page. In otherwords, in a second read operation which is subsequently executed when anECC error occurs and retry read is executed, the correction value of theread voltage calculated by the controller 20 in the most recent retryread is applied.

The waveform illustrated in FIG. 28 corresponds to the operations ofsteps S110 to S119 described above. In the example illustrated in FIG.28, the shift read by the voltage Vcal1 is executed at the first readoperation at the beginning. In the subsequent retry read, the shift readby the optimum read voltage Vcal2 calculated by the controller 20 isexecuted. In the second read operation after the retry read, the shiftread by a feedback voltage of the read voltage used in the retry read isexecuted.

As described above, the memory system 1 can also apply the optimum readvoltage calculated by the controller 20 in the retry read to thesubsequent second read operation. In addition, the controller 20 canshorten the time required to calculate an optimum value, by calculatingthe optimum read voltage based on the data read by shift read, when anECC error occurs.

The correction value based on the calculation by the controller 20,which is retained in the semiconductor memory device 10, is updated whenthe first read operation or the retry read is next executed. In theabove description, the case where the ECC error occurs in the first readoperation is described as an example, but any other cases are possible.Even when an ECC error occurs, for example, in the second and third readoperations, the retry read as described above can be executed.

In the above description, the case is described as an example where thecontroller 20 issues the sixth command set CS6 when instructing thesemiconductor memory device 10 to perform the retry read, but any otherinstructions may be given. For example, the controller 20 instructs thesemiconductor memory device 10 to execute an operation to change anoperation mode of the semiconductor memory device 10, referred to as“Set feature”, or an operation to change various parameters of thesemiconductor memory device 10, referred to as “Parameter set”, so thatthe optimum read voltage calculated by the controller 20 may be appliedto the semiconductor memory device 10. In this case, after thecontroller 20 changes the operation mode or the parameter of thesemiconductor memory device 10 in the Set feature or the like, a commandset (for example, a command set CS2) instructing a shift read using thecorrection value is issued. An example of the command sequence in whichthe controller 20 instructs the semiconductor memory device 10 toexecute Set feature is illustrated in FIG. 30.

As illustrated in FIG. 30, first, the controller 20 issues, for example,a Set feature command “EFH”, and sends the Set feature command “EFH” tothe semiconductor memory device 10. The command “EFh” is a commandinstructing the semiconductor memory device 10 to change the parameter.Next, the controller 20 issues address information ADD, and sends theaddress information ADD to the semiconductor memory device 10. Thisaddress information ADD is used to designate the address correlated withthe parameter to be changed. Next, the controller 20 outputs set dataDin for a plurality of cycles, to the semiconductor memory device 10.The output data Din corresponds to a parameter to be changed.

Upon receipt of these commands, or the like, the semiconductor memorydevice 10 starts the Set feature, and the operation mode of thesemiconductor memory device 10 is changed. In this example, thecorrection value of the read voltage retained in the semiconductormemory device 10 is changed based on the optimum read voltage calculatedby the controller 20, by the Set feature. The illustrated tSet indicatesthe period during which the set feature is performed, and thesemiconductor memory device 10 becomes a busy state during this period,In other words, when issuing a command set instructing a shift readusing the correction value, after the operation mode or the parameter ofthe semiconductor memory device 10 is changed by the Set feature or thelike, the semiconductor memory device 10 becomes a busy statetemporarily before the semiconductor memory device 10 executes a retryread.

In addition, the correction value of the read voltage set by the Setfeature may be retained separately from the correction value of the readvoltage calculated by the semiconductor memory device 10. In this case,the semiconductor memory device 10 executes a shift read in which thecorrection value designated by Set feature or the like is applied to thedesignated correction value, for example, based on the command sequencesuch as the command set CS6.

In the operation described with reference to FIG. 27 and FIG. 28, aseventh command set CS7 as illustrated in FIG. 31 may be used instead ofthe sixth command set CS6. As illustrated in FIG. 31, the command setCS7 is similar to the command set CS6 illustrated in FIG. 29, exceptthat a special command “yyh” is issued before a special command “zzh”.As described above, the memory system 1 can simultaneously use aplurality of special commands. In this case, for example, a shift readby the read voltage designated by the controller 20 is instructed by thecommand “yyh”, and the correction value designated with the Set featureor the Parameter set is applied by the command “zzh”, with the level ofthe read voltage designated by the command “yyh” as a reference.

In the above embodiment, a method by which the controller 20 calculatesthe optimum read voltage is described in, for example, U.S. patentapplication Ser. No. 15/195,560, filed on Jun. 28, 2016, entitled“SEMICONDUCTOR MEMORY DEVICE.” This patent application is incorporatedherein by reference in its entirety.

In the input/output signal I/O illustrated in FIG. 9, FIG. 14, FIG. 16,FIG. 18, FIG. 21, FIG. 25, FIG. 26, and FIG. 28 used in the abovedescription, only the command set CS sent from the controller 20 to thesemiconductor memory device 10 is illustrated, and the read data DATsent from the semiconductor memory device 10 to the controller 20 isomitted.

In addition, in the above description, the commands “xxh”, “yyh”, and“zzh” illustrated in FIG. 10, FIG. 11, FIG. 12, FIG. 29, and FIG. 31 areonly examples, and it is possible to assign a different name to each ofthem.

In the above description, “read voltage” corresponds to the voltageapplied when data is read out. That is, for example, in the waveformdiagram illustrated in FIG. 9, the voltage applied to the selected wordline during the tracking read is expressed in a stepwise manner, butthis voltage may be continuously increased. In this case, data is readby matching the timing to assert the signal STB to the timing in whichthe read voltage is applied.

In the above description, the term “connection” indicates electricalconnection, and includes not only a case of being connected directly butalso a case of being connected through any element.

In the above embodiment, the memory cell array 11 may have a structurein which memory cell transistors MT are three-dimensionally stackedabove a semiconductor substrate. Such a configuration is described in,for example, U.S. patent application Ser. No. 12/407,403 filed on Mar.19, 2009, entitled “THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTORMEMORY,” U.S. patent application Ser. No. 12/406,524, filed on Mar. 18,2009, entitled “THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTORMEMORY,” U.S. patent application Ser. No. 12/679,991, filed on Mar. 25,2010, entitled “NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OFMANUFACTURING THE SAME,” and U.S. patent application Ser. No.12/532,030, filed on Mar. 23, 2009, entitled “SEMICONDUCTOR MEMORY ANDMETHOD FOR MANUFACTURING SAME.” These patent applications areincorporated herein by reference in their entirety.

Further, in the above embodiment, the block BLK may be an erase unit ofdata. However, other erasing operations may be employed. They aredescribed in U.S. patent application Ser. No. 13/235,389, filed on Sep.18, 2011, entitled “NONVOLATILE SEMICONDUCTOR MEMORY DEVICE,” and U.S.patent application Ser. No. 12/694,690, filed on Jan. 27, 2010, entitled“NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE.” These patent applicationsare incorporated herein by reference in their entirety.

Further, it is possible to apply the method described in U.S. patentapplication Ser. No. 13/544,147 filed on Jul. 9, 2012 entitled“SEMICONDUCTOR MEMORY DEVICE WHICH STORES MULTIVALUED DATA,” to thedetails of the tracking read in the above embodiment. The content ofthis patent application is incorporated herein by reference in itsentirety.

Further, in the above respective embodiments,

(1) In the read operation, the voltage applied to the word line selectedfor the read operation of “A” level is in a range of, for example, from0 to 0.55 V. The voltage is not limited thereto, and may be in a rangeof any one of from 0.1 to 0.24 V, from 0.21 to 0.31 V, from 0.31 to 0.4V, from 0.4 to 0.5 V, and from 0.5 to 0.55 V.

The voltage applied to the word line selected for the read operation of“B” level is in a range of, for example, from 1.5 to 2.3 V. The voltageis not limited thereto, and may be in a range of any one of from 1.65 to1.8 V, from 1.8 to 1.95 V, from 1.95 to 2.1 V, and from 2.1 to 2.3 V.

The voltage applied to the word line selected for the read operation of“C” level is in a range of, for example, from 3.0 to 4.0 V. The voltageis not limited thereto, and may be in a range of any one of from 3.0 to3.2 V, from 3.2 to 3.4 V, from 3.4 to 3.5 V, from 3.5 to 3.6 V, and from3.6 to 4.0 V.

The time (tRead) of the read operation may be in a range of, forexample, from 25 to 38 μs, from 38 to 70 μs, or from 70 to 80 μs.

(2) The write operation includes the program operation and theverification operation as described above. In the write operation, thevoltage first applied to the word line selected for the programoperation is in a range of, for example, from 13.7 to 14.3 V. Thevoltage is not limited thereto, and may be in a range of, for example,any one of from 13.7 to 14.0 V, and from 14.0 to 14.6 V.

The voltage first applied to the selected word line when writing to anodd-numbered word line and the voltage first applied to the selectedword line when writing to an even-numbered word line may be changed.

When the program operation is set to the incremental step pulse program(ISPP) method, the voltage of the step-up is, for example, about 0.5 V.

The voltage applied to the unselected word line may be in a range of,for example, from 6.0 to 7.3 V. The voltage is not limited thereto, andmay be, for example, from 7.3 to 8.4 V, or less than 6.0 V.

The bus voltage to be applied may be changed, depending on whether theunselected word line is an odd-numbered word line or an even-numberedword line.

The time (tProg) of the write operation may be in a range of, forexample, from 1,700 to 1,800 μs, from 1,800 to 1,900 μs, or from 1,900to 2,000 μs.

(3) In the erasing operation, the voltage to be first applied to a wellwhich is formed at the top of the semiconductor substrate and on whichthe memory cell is placed is, for example, from 12.0 to 13.6 V. Thevoltage is not limited thereto, and may be in a range of, for example,any one of from 13.6 to 14.8 V, from 14.8 to 19.0 V, from 19.0 to 19.8V, and from 19.8 to 21.0 V.

The time (tErase) of the erasing operation may be in a range of, forexample, from 3,000 to 4,000 μs, from 4,000 to 5,000 μs, or from 4,000to 9,000 μs.

(4) The structure of the memory cell has a charge storage layer placedon a semiconductor substrate (silicon substrate) through a tunnelinsulating film having a thickness of from 4 to 10 nm. This chargestorage layer can be made as a stacked structure of an insulating filmof Sin, SiON, or the like having a thickness of from 2 to 3 nm and apolysilicon film having a thickness of from 3 to 8 nm. Further, metal ofRu or the like may be added to the polysilicon. An insulating film isplaced on the charge storage layer. The insulating film has, forexample, a silicon oxide film having a thickness of from 4 to 10 nminterposed between a lower high-k film having a film thickness of from 3to 10 nm and an upper high-k film having a thickness of from 3 to 10 nm.The high-k film is HfO or the like. In addition, the thickness of thesilicon oxide film can be made thicker than the thickness of the high-kfilm. A control electrode having a thickness of from 30 to 70 nm isformed on the insulating film through a material having a thickness offrom 3 to 10 nm. Here, the material is a metal oxide film of TAO or thelike, or a metal nitride film of TAn or the like. W or the like can beused for the control electrode.

In addition, an air gap can be formed between memory cells.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor memory device comprising: amemory cell array including first memory cells, second memory cells andthird memory cells; a first word line connected to gates of the firstmemory cells; a second word line connected to gates of the second memorycells; a third word line connected to gates of the third memory cells;and a control circuit configured to execute a first read operation inresponse to a first command set, a second read operation in response toa second command set following the first command set, and a third readoperation in response to a third command set following the first commandset, wherein the first read operation includes a first read sequence, inwhich the control circuit applies at least first to third voltages whichare different from each other, to the first word line, in the secondread operation, the control circuit reads data from the second memorycells by applying a first read voltage that is set based on the resultof the first read sequence of the first read operation, to the secondword line, and in the third read operation, the control circuit readsdata from the third memory cells by applying a second read voltage thatis set independently of the result of the first read sequence, to thethird word line.
 2. The device according to claim 1, wherein the thirdcommand set includes a read command that is to be read by the controlcircuit prior to reading address information that is also included inthe third command set.
 3. The device according to claim 2, wherein thefirst command set includes a first special command and a read command,the first special command to be read by the control circuit prior toreading the read command in the first command set, and the read commandin the first command set to be read by the control circuit prior toreading address information that is also included in the first commandset, and the second command set includes a second special command and aread command, the second special command to be read by the controlcircuit prior to reading the read command in the second command set, andthe read command in the second command set to be read by the controlcircuit prior to reading address information that is also included inthe second command set.
 4. The device according to claim 1, wherein thefirst read operation includes a second read sequence, in which thecontrol circuit reads the data from the first memory cells by applying athird read voltage that is set based on the result of the first readsequence.
 5. The device according to claim 1, further comprising afourth word line connected to gates of fourth memory cells of the memorycell array; and a fifth word line connected to gates of fifth memorycells of the memory cell array, wherein the control circuit isconfigured to execute a fourth read operation in response to a fourthcommand set, and a fifth read operation in response to a fifth commandset following the fourth command set, the fourth read operationincluding a third read sequence, in which the control circuit applies atleast fourth to sixth voltages which are different from each other, tothe fourth word line, and in the fifth read operation, the controlcircuit reading data from the fifth memory cells by applying a thirdread voltage that is set based on the result of the third read sequenceof the fourth read operation, to the fifth word line.
 6. The deviceaccording to claim 5, wherein the third read voltage is different fromthe second read voltage.
 7. The device according to claim 5, wherein thefirst and fourth command sets each include a first special command andthe second and fifth command sets each include a second special command,and the first special command is to be read by the control circuit priorto reading a read command that is also included in the fourth commandset, and the second special command is to be read by the control circuitprior reading a read command that is also included in the fifth commandset.
 8. A memory system comprising a controller and a semiconductormemory device of claim
 1. 9. A semiconductor memory device comprising: amemory cell array including first memory cells, second memory cells,third memory cells and fourth memory cells; a first word line connectedto gates of the first memory cells; a second word line connected togates of the second memory cells; a third word line connected to gatesof the third memory cells; a fourth word line connected to gates of thefourth memory cells; and a control circuit is configured to execute afirst read operation in response to a first command set, a second readoperation in response to a second command set following the firstcommand set, a third read operation in response to a third command setfollowing the second command set and a fourth read operation in responseto a fourth command set following the third command set; wherein thefirst read operation includes a first read sequence, in which thecontrol circuit applies at least first to third voltages which aredifferent from each other, to the first word line, in the second readoperation, the control circuit reads data from the second memory cellsby applying a first read voltage, to the second word line, the thirdread operation includes a third read sequence, in which the controlcircuit applies at least fourth to sixth voltages which are differentfrom each other, to the third word line, and in the fourth readoperation, the control circuit reads data from the fourth memory cellsby applying a second read voltage, to the fourth word line, wherein thesecond command set and the fourth command set each include a specialcommand and a read command that is to be read by the control circuitprior to reading address information also included in the respectivesecond or fourth command set, and the first read voltage is differentfrom the second read voltage.
 10. The device according to claim 9,wherein the first command set and the third command set each include aspecial command and a read command that is to be read by the controlcircuit prior to reading address information also included in therespective first or third command set.
 11. The device according to claim9, wherein the first read operation includes a second read sequence, inwhich the control circuit reads the data from the first memory cells byapplying a third read voltage that is set based on the result of thefirst read sequence, and the third read operation includes a fourth readsequence, in which the control circuit reads the data from the thirdmemory cells by applying a fourth read voltage that is set based on theresult of the third read sequence.
 12. The device according to claim 11,wherein the first read voltage is set based on the third read voltageand the second read voltage is set based on the fourth read voltage. 13.A memory system comprising a controller and a semiconductor memorydevice of claim
 9. 14. A method of performing a read operation in asemiconductor memory device comprising a memory cell array includingfirst memory cells, second memory cells and third memory cells, a firstword line connected to gates of the first memory cells, a second wordline connected to gates of the second memory cells, and a third wordline connected to gates of the third memory cells, said methodcomprising: in response to a first command set, executing a first readsequence during which at least first to third voltages which aredifferent from each other are applied to the first word line; inresponse to a second command set following the first command set,reading data from the second memory cells by applying a first readvoltage that is set based on the result of the first read sequence, tothe second word line; and in response to a third command set followingthe first command set, reading data from the third memory cells byapplying a second read voltage that is set independently of the resultof the first read sequence, to the third word line.
 15. The methodaccording to claim 14, wherein the third command set includes a readcommand that is to be read prior to reading address information that isalso included in the third command set.
 16. The method according toclaim 15, wherein the first command set includes a first special commandand a read command, the first special command to be read prior toreading the read command in the first command set, and the read commandin the first command set to be read prior to reading address informationthat is also included in the first command set, and the second commandset includes a second special command and a read command, the secondspecial command to be read prior to reading the read command in thesecond command set, and the read command in the second command set to beread prior to reading address information that is also included in thesecond command set.
 17. The method according to claim 14, furthercomprising: in response to the first command set and after executing thefirst read sequence, executing a second read sequence during which datafrom the first memory cells are read by applying a third read voltagethat is set based on the result of the first read sequence.